Numerical Simulations of Non-Step Single Quantum Well Semiconductor Lasers

Abstract Simulation of the quantum well semiconductor lasers are usually done based on the abrupt variations in the neighbouring materials. Practically, it is not possible to construct such quantum wells because the material mole fraction of compound semiconductors cannot change abruptly. In this paper, a quantum well semiconductor laser with a Gaussian-well shape is used to simulate this effect. It is found that for In۰.۷۲Ga۰.۲۸As۰.۶P۰.۴ lasers, application of this assumption causes about six-percent decrement in the output wavelength of the laser. Keywords: Quantum well semiconductor laser, Schrödinger equation, numerical simulation.